2SB1123-R datasheet(1/4 Pages) YFWDIODE

No. de pieza	2SB1123-R

Descripción Electrónicos	PNP Transistor

PDF	4 Pages

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Fabricante Electrónico	YFWDIODE [DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD]

Página de inicio	http://www.yfwdiode.com/

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2SB1123 SOT-89

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www.yfwdiode.com

Dongguan YFW Electronics Co, Ltd.

PNP Transistor

1

2

3

■

Simplified outline(SOT-89)

1.Base

2.Collector

3.Emitter

■

Features

●

Low collector-to-emitter saturation voltage.

●

Large current capacity and wide ASO.

●

Fast switching speed.

●

Complementary to 2SD1623

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-60

Collector - Emitter Voltage

VCEO

-50

Emitter - Base Voltage

VEBO

-6

Collector Current - Continuous

IC

-2

Collector current -Pulse

ICP

-4

Collector Power Dissipation

0.5

(Note.1)

1.3

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

A

PC

W

Note.1: Mounted on ceramic board (250mm2 ×0.8mm)

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-60

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA， RBE=∞

-50

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-6

Collector-base cut-off current

ICBO

VCB= -50V , IE=0

-0.1

Emitter cut-off current

IEBO

VEB= -5V , IC=0

-0.1

Collector-emitter saturation voltage

VCE(sat) IC=-1 A, IB=-50mA

-0.3

-0.7

Base - emitter saturation voltage

VBE(sat) IC=-1 A, IB=-50mA

-0.9

-1.2

VCE= -2V, IC= -100 mA

100

560

VCE= -2V, IC= -1.5 A

40

Turn-ON Time

ton

60

Storage Time

tstg

450

Fall Time

tf

30

Collector output capacitance

Cob

VCB = –10V, IE = 0, f = 1MHz

22

pF

Transition frequency

fT

VCE= -10V, IC= -50mA

150

MHz

See specified Test Circuit.

ns

V

uA

DC current gain

hFE

V

■

Classification of hfe(1)

Type

2SB1123-R

2SB1123-S

2SB1123-T

2SB1123-U

Range

100-200

140-280

200-400

280-560

Marking

BF R*

BF S*

BF T*

BF U*

■

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