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ISCN218N Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCN218N Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor ISCN218N DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) · High Switching Speed · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 15 A PC Collector Power Dissipation @ TC=25℃ 120 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Número de pieza similar - ISCN218N |
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Descripción similar - ISCN218N |
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