1 - 4

© 2000 IXYS All rights reserved

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

N07

70

V

N06

60

V

V

DGR

T

N07

70

V

N06

60

V

V

GS

Continuous

±20

V

V

GSM

Transient

±30

V

I

D25

T

110

A

I

D130

T

76

A

I

DM

T

600

A

I

AR

T

100

A

E

AR

T

mJ

E

AS

T

J

dv/dt

I

5

V/ns

T

P

D

T

500

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in) from case for 10 s

300

°C

M

d

Mounting torque

0.9/6

Nm/lb.in.

Terminal connection torque

-

Nm/lb.in.

Weight

10

g

Power MOSFETs

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t

rr

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

V

DSS

V

GS

= 0 V, I

N06

60

V

N07

70

V

V

GS (th)

V

DS

= V

2

4

V

I

GSS

V

GS

=

±20 V

±200

nA

I

DSS

V

DS

= 0.8 • V

DSS

T

400

mA

V

GS

= 0 V

T

mA

R

DS(on)

V

GS

= 10 V, I

110N06/110N07

6 m

W

Note 2

105N07

7 m

W

TO-264 AA (IXFK)

S

G

D

Features

• International standard packages

• JEDEC TO-264 AA, epoxy meet

UL94 V-0, flammability classification

• Low R

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Synchronous rectification

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• Temperature and lighting controls

• Low voltage relays

Advantages

• Easy to mount

• Space savings

• High power density

92802I (10/97)

(TAB)

V

DSS

I

D25

R

DS(on)

IXFK 110 N06

60 V

110 A

6 m

W

IXFK 105 N07

70 V

105 A

7 m

W

IXFK 110 N07

70 V

110 A

6 m

W

t

IXYS reserves the right to change limits, test conditions, and dimensions.