IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFN 58N50

IXFN 61N50

g

fs

V

DS

= 10 V; I

20

30

S

C

iss

V

GS

= 0 V, V

11

nF

C

oss

1550

pF

C

rss

225

pF

t

d(on)

V

GS

= 10 V, V

30

ns

t

r

R

G

= 1

Ω (External)

60

ns

t

d(off)

100

ns

t

f

50

ns

Q

g

V

GS

= 10 V, V

420

nC

Q

gs

55

nC

Q

gd

160

nC

R

thJC

0.20 K/W

R

thCK

0.05

K/W

Source-Drain Diode

Ratings and Characteristics

(T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

GS

= 0

61

A

I

SM

Repetitive; pulse width limited by T

JM

244

A

V

SD

I

F

= I

1.5

V

Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

t

rr

I

F

250

ns

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

Package Outline

Notes:

1. Pulse width limited by max T

2. I

F

< I

DM

, di/dt < 100 A/µs, V

DD

< V

DSS

, T

J

< 150ºC, R

G

= 2

Ω.

The data supplied herein reflects the pre-production objective specification and characterization from engineering lots.