MMM6035 datasheet(7/22 Pages) FREESCALE

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RF Specifications

MMM6035 Advance Information, Rev. 2.4

Freescale Semiconductor

Load mismatch ruggedness

All angles

Set Vramp where Po(H)

≤ 34.2 dBm into 50 Ω load

No damage, no degradation

VSWR

20:1

Power Control Range over VRNG, TRNG

RPC

Table 8. Power Control Specifications

(VREG = 2.8 V, Vrng = 3.0 to 4.5 V, -20 to 85° C)

Characteristic

Conditions

Symbol

Min

Typ

Max

Unit

Wake-up Time

VBAT = 3.6 V

TA = 25° C, Time to

reach stable VD_OUT

after 0.3 V VRAMP step

twu

-12-

µs

Vramp Input Voltage Offset

Voltage at which

VD_OUT rises above

0 V

Voffset

0.18

0.2

VD_OUT vs. VRAMP Slope

VBAT = 3.6 V

TA = 25° C, VRAMP >

VOffset

Vslope

-2.0

V/V

Po versus VRAMP Slope

VBAT = 3.6 V

TA = 25° C, Po>5 dBm

for TX CEL and EGSM,

Po>0 dBm for TX DCS

and PCS

Po_slope1

240

dB/V

VRAMP Controller Enable Threshold

VBAT = 3.6 V

TA = 25° C, Rising

VRAMP

Vctrl(R)

-160

VRAMP Controller Disable Threshold

VBAT = 3.6 V

TA = 25° C, Falling

VRAMP

Vctrl(F)

-140

Smoothing Filter Bandwidth (3 dB cutoff

frequency)

VBAT = 3.6 V

TA = 25° C

vramp

-200

kHz

Smoothing Filter Attenuation (Atten at 1

MHz)

VBAT = 3.6 V

αvramp

Smoothing Filter Rise Time (Vdout rise

time between 10% and 90% with VRAMP

step of Voffset 50 mV)

VBAT = 3.6 V

TA = 25° C

-2.5

µs

Table 7. Mode GMSK PCS Band Specifications (continued)

(TXIN_HB = 3 dBm, VBAT = 3.6 V, VRAMP = 0.1 to 2.2 V pulsed, Period = 4.6 ms, Duty Cycle = 25%, LB_HB = 2.8 V,

VREG = 2.8 V, TX_EN = 2.8 V, TA = 25° C ±5° C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

MMM6035 Datasheet(PDF) 7 Page - Freescale Semiconductor, Inc

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