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2SC3588-Z Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SC3588-Z
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC3588-Z Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc Website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
2SC3588-Z
DESCRIPTION
·
Low Collector Saturation Voltage-
VCE(sat)= 0.5V(Max)@ IC= 300mA
·
High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 400V(Min)
·
Complement to Type 2SA1400-Z
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for high Voltage switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
0.5
A
ICM
Collector Current-Pulse
1
A
PC
Collector Power Dissipation
@ TC=25℃
2
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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