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2SC3518 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza 2SC3518
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC3518 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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isc website:www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
2SC3518
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
VCE(sat)NOTE
Collector-Emitter Saturation Voltage IC= 2A; IB= 200mA
0.3
V
VBE(sat)NOTE
Base-Emitter Saturation Voltage
IC= 2A; IB= 200mA
1.2
V
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
10
μ
A
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
10
μ
A
hFE-1NOTE
DC Current Gain
IC= 5A; VCE= 1V
50
hFE-2NOTE
DC Current Gain
IC= 2A; VCE= 1V
100
400
fTNOTE
Current-Gain—Bandwidth Product
IC= 500mA; VCE= 10V
120
MHz
NOTE:Pulse test PW≤350us,duty cycle ≤2%/pulse
hFE-2 Classifications
M
L
K
100-200
160-320 200-400
NOTICE:
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.



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