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IPZA65R029CFD7 Datasheet(PDF) 1 Page - Infineon Technologies AG

No. de pieza IPZA65R029CFD7
Descripción Electrónicos  650V CoolMOS짧 CFD7 SJ Power Device
PDF  14 Pages
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Fabricante Electrónico  INFINEON [Infineon Technologies AG]
Página de inicio  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPZA65R029CFD7 Datasheet(HTML) 1 Page - Infineon Technologies AG

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1
IPZA65R029CFD7
Rev.2.1,2020-08-12
Final Data Sheet
1
2
3 4
tab
PG-TO247-4-3
Drain
Pin 1, Tab
Gate
Pin 4
Power
Source
Pin 2
Driver
Source
Pin 3
*1: Internal body diode
*1
MOSFET
650VCoolMOSªCFD7SJPowerDevice
Thelatest650VCoolMOS™CFD7extendsthevoltageclassofferingof
theCFD7familyandisasuccessortothe650VCoolMOS™CFD2.
Resultingfromimprovedswitchingperformanceandexcellentthermal
behavior,650VCooMOS™CFD7offershighestefficiencyinresonant
switchingtopologies,suchasLLCandphase-shift-full-bridge(ZVS).As
partofInfineon’sfastbodydiodeportfolio,thisnewproductseriesblends
alladvantagesofafastswitchingtechnologytogetherwithsuperiorhard
commutationrobustness.TheCoolMOS™CFD7technologymeets
highestefficiencyandreliabilitystandardsandfurthermoresupportshigh
powerdensitysolutions.
Features
•Ultra-fastbodydiode
•650Vbreakdownvoltage
•Best-in-classRDS(on)
•Reducedswitchinglosses
•LowRDS(on)dependencyovertemperature
Benefits
•Excellenthardcommutationruggedness
•Extrasafetymarginfordesignswithincreasedbusvoltage
•Enablingincreasedpowerdensitysolutions
•OutstandinglightloadefficiencyinindustrialSMPSapplications
•ImprovedfullloadefficiencyinindustrialSMPSapplications
•PricecompetitivenessoverpreviousCoolMOS™families
Potentialapplications
SuitableforSoftSwitchingtopologies
Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications–Server,
Telecom,EVCharging,Solar
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Pleasenote:Thesourceandsensesourcepinsarenotexchangeable.
Theirexchangemightleadtomalfunction.Forparalleling4pinMOSFET
devicestheplacementofthegateresistorisgenerallyrecommendedtobe
ontheDriverSourceinsteadoftheGate.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
700
V
RDS(on),max
29
m
Ω
Qg,typ
145
nC
ID,pulse
304
A
Eoss @ 400V
19.8
µJ
Body diode diF/dt
1300
A/µs
Type/OrderingCode
Package
Marking
RelatedLinks
IPZA65R029CFD7
PG-TO247-4-3
65R029F7
see Appendix A


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