STM32H747AI datasheet(155/252 Pages) STMICROELECTRONICS

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DS12930 Rev 1

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STM32H747xI/G

Electrical characteristics

221

6.3.17

I/O current injection characteristics

As a general rule, a current injection to the I/O pins, due to external voltage below VSS or

above VDD (for standard, 3.3 V-capable I/O pins) should be avoided during the normal

product operation. However, in order to give an indication of the robustness of the

microcontroller in cases when an abnormal injection accidentally happens, susceptibility

tests are performed on a sample basis during the device characterization.

Functional susceptibility to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting

current into the I/O pins programmed in floating input mode. While current is injected into

the I/O pin, one at a time, the device is checked for functional failures.

The failure is indicated by an out of range parameter: ADC error above a certain limit (higher

than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out

of –5 µA/+0 µA range), or other functional failure (for example reset, oscillator frequency

deviation).

The following tables are the compilation of the SIC1/SIC2 and functional ESD results.

Negative induced A negative induced leakage current is caused by negative injection and

positive induced leakage current by positive injection.

Table 70. I/O current injection susceptibility(1)

Symbol

Description

Functional susceptibility

Unit

Negative

injection

Positive

injection

IINJ

PA7, PC5, PG1, PB14, PJ7, PA11, PA12, PA13, PA14, PA15,

PJ12, PB4

PA2, PH2, PH3, PE8, PA6, PA7, PC4, PE7, PE10, PE11

PA0, PA_C, PA1, PA1_C, PC2, PC2_C, PC3, PC3_C, PA4,

PA5, PH4, PH5, BOOT0

All other I/Os

1. Guaranteed by characterization

STM32H747AI Datasheet(PDF) 155 Page - STMicroelectronics