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DS42516 Datasheet(PDF) 41 Page - Advanced Micro Devices

No. de pieza DS42516
Descripción Electrónicos  Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
PDF  58 Pages
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Fabricante Electrónico  AMD [Advanced Micro Devices]
Página de inicio  http://www.amd.com
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DS42516 Datasheet(HTML) 41 Page - Advanced Micro Devices

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DS42516
41
AC CHARACTERISTICS
Flash Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Flash Erase And Programming Performance” section for more information.
Parameter
90 ns Speed
Unit
JEDEC
Std
Description
Min
Typ
Max
t
AVAV
t
WC
Write Cycle Time (Note 1)
90
ns
t
AVWL
t
AS
Address Setup Time (WE# to Address)
0
ns
t
ASO
Address Setup Time to OE# or
CE#f Low During Toggle Bit
Polling
15
ns
t
WLAX
t
AH
Address Hold Time (WE# to Address)
45
ns
t
AHT
Address Hold Time From CE#f or OE# High During Toggle Bit
Polling
0ns
tDVWH
tDS
Data Setup Time
45
ns
tWHDX
tDH
Data Hold Time
0
ns
tOEH
OE# Hold Time
Read
0
ns
Toggle and Data# Polling
10
ns
tOEPH
Output Enable High During Toggle Bit Polling
20
20
20
ns
tGHEL
tGHEL
Read Recovery Time Before Write (OE# High to CE#f Low)
0
ns
tGHWL
tGHWL
Read Recovery Time Before Write (OE# High to WE# Low)
0
ns
tWLEL
tWS
WE# Setup Time (CE#f to WE#)
0
ns
tELWL
tCS
CE#f Setup Time (WE# to CE#f)
0
ns
tEHWH
tWH
WE# Hold Time (CE#f to WE#)
0
ns
tWHEH
tCH
CE#f Hold Time (CE#f to WE#)
0
ns
tWLWH
tWP
Write Pulse Width
35
ns
tELEH
tCP
CE#f Pulse Width
35
ns
tWHDL
tWPH
Write Pulse Width High
30
ns
tSR/W
Latency Between Read and Write Operations
0
ns
tWHWH1
tWHWH1
Programming Operation (Note 2)
Byte
5
µs
Word
7
tWHWH1
tWHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
4µs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
0.7
sec
t
VCS
V
CCf Setup Time (Note 1)
50
µs
t
RB
Write Recovery Time From RY/BY#
0
ns
t
BUSY
Program/Erase Valid To RY/BY# Delay
90
ns



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