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2SD596 Datasheet(PDF) 2 Page - SHIKUES Electronics |
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2SD596 Datasheet(HTML) 2 Page - SHIKUES Electronics |
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2 / 4 page ![]() ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 B 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=30V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=1V,IC=100mA VCE=1V,IC=700mA 110 50 200 400 Collector-emitter saturation voltage VCE(sat) IC=700mA, IB=70mA B 0.22 0.6 V Base to Emitter voltage VBE VCE=6V,IC=10mA 600 640 700 V Transition frequency fT VCE=6V, IE= -10mA 170 MHz Output capacitance Cob VCB=6V, IE=0,f=10kHz 12 pF CLASSIFICATION OF hFE(1) Range 110-180 135-220 170-270 200-320 250-400 Marking DV1 DV2 DV3 DV4 DV5 2SD596 2 of 4 REV.08 |
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