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STW12N170K5 Datasheet(PDF) 2 Page - STMicroelectronics

No. de pieza STW12N170K5
Descripción Electrónicos  N-channel 1700 V, 2.3 Ω typ., 5 A, MDmesh™K5 Power MOSFET in a TO??47 package
PDF  14 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW12N170K5 Datasheet(HTML) 2 Page - STMicroelectronics

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1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
±30
V
ID
Drain current at TC = 25 °C
5
A
Drain current at TC = 100 °C
3
A
IDM(1)
Drain current (pulsed)
10
A
PTOT
Total power dissipation at TC = 25 °C
250
W
dv/dt(2)
Peak diode recovery voltage slope
4.5
V/ns
dv/dt(3)
MOSFET dv/dt ruggedness
50
V/ns
TJ
Operating junction temperature range
-55 to 150
°C
Tstg
Storage temperature range
1. Pulse width limited by safe operating area
2. ISD ≤ 5 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS
3. VDS ≤ 1360 V
Table 2. Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
0.5
°C/W
Rthj-amb
Thermal resistance junction-amb
50
°C/W
Table 3. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR(1)
Maximum current during repetitive or single pulse avalanche
1.7
A
EAS(2)
Single pulse avalanche energy
1000
mJ
1. Pulse width limited by TJmax
2. Starting TJ = 25 °C, ID = IAR, VDD = 50 V
STW12N170K5
Electrical ratings
DS12847 - Rev 1
page 2/14



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