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PD4M440L Datasheet(PDF) 1 Page - Nihon Inter Electronics Corporation |
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PD4M440L Datasheet(HTML) 1 Page - Nihon Inter Electronics Corporation |
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1 / 4 page  MOSFET MODULE MODULE MODULE MODULE Dual 30A 450V/500V Dual 30A 450V/500V Dual 30A 450V/500V Dual 30A 450V/500V PD4M441L / PD4M440L PD4M441L / PD4M440L PD4M441L / PD4M440L PD4M441L / PD4M440L MAXMUM RATINGS Ratings Symbol PD4M441L PD4M440L Unit Drain-Source Voltage (VGS=0V) VDSS 450 500 V Gate -Source Voltage VGSS +/ - 20 V Duty=50% 30 (Tc=25 °C) Continuous Drain Current D.C. ID 21 (Tc=25 °C) A Pulsed Drain Current IDM 60 Tc=25 °C) A Total PowerDissipation PD 230 Tc=25 °C) W OperatingJunction Temperature Range Tjw -40 to +150 °C Storage Temperature Range Tstg -40 to +125 °C Isolation Voltage Terminals to Base AC, 1 min.) VISO 2000 V Module Base to Heatsink 3.0 MountingTorque Bus Bar to Main Terminals FTOR 2.0 N •m ELECTRICAL CHARACTERISTICS (@Tc=25°Cunlessotherwisenoted) Characteristic Symbol Test Condition Min. Typ. Max. Unit VDS=VDSS,VGS=0V - - 1.0 Zero Gate Voltage Drain Current IDSS Tj=125 °C,VDS=VDSS,VGS=0V - - 4.0 mA Gate-Source ThresholdVoltage VGS(th) VDS=VGS, ID=1mA 2.0 3.2 4.0 V Gate-Source Leakage Current IGSS VGS=+/- 20V,VDS=0V - - 1.0 µA StaticDrain-Source On-Resistance rDS(on) VGS=10V, ID=15A - 190 210 m-ohm Forward Transconductance gfs VDS=15V, ID=15A - 27 - S InputCapacitance Cies - 5.2 - nF OutputCapacitance Coss - 1.1 - nF Reverse TransferCapacitance Crss VDS=25V,VGS=0V,f=1MHz - 0.18 - nF Turn-On DelayTime td(on) - 100 - Rise Time tr - 60 - Turn-Off Delay Time td(off) - 180 - Fall Time tf VDD=1/2VDSS ID=15A VGS=-5V, +10V RG=7ohm - 50 - ns FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Continuous Source Current IS D.C. - - 21 A PulsedSource Current ISM - - - 60 A Diode ForwardVoltage VSD IS=30A - - 2.0 V Reverse RecoveryTime trr - 750 - ns Reverse Recovery Qr IS=30A, -dis/dt=100A/ µs - 17 - µC THERMAL CHARACTERISTICS Characteristic Symbol Test Condition Min. Typ. Max. Unit MOSFET - - 0.56 Thermal Resistance, Junction to Case Rth(j-c) Diode - - 0.56 Thermal Resistance, Case to Heatsink Rth(c-f) Mountingsurface flat, smooth, and greased - - 0.1 °C/W Dimension(mm) FEATURES * Dual MOSFETs Cascaded Circuit * LowOn-Resistance andSwitching Dissipation TYPICAL APPLICATIONS * PowerSupplyforthe Communications and the Induction Heating Approximate Weight:220g OUTLINE DRAWING Circuit 108.0 |
Número de pieza similar - PD4M440L |
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Descripción similar - PD4M440L |
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