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RFD10P03LSM Datasheet(PDF) 4 Page - Harris Corporation

No. de pieza RFD10P03LSM
Descripción Electrónicos  10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET
PDF  12 Pages
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Fabricante Electrónico  HARRIS [Harris Corporation]
Página de inicio  http://www.harris.com
Logo HARRIS - Harris Corporation

RFD10P03LSM Datasheet(HTML) 4 Page - Harris Corporation

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NOTE: Refer to Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves Unless Otherwise Specified (Continued)
-50
-10
-1
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
IF R
≠ 0
tAV = (L/R) ln [(IAS*R)/(1.3 RATED BVDSS - VDD) + 1]
STARTING TJ = 150
oC
STARTING TJ = 25
oC
tAV = (L) (IAS)/(1.3 RATED BVDSS - VDD)
If R = 0
0
0
-1.0
-2.0
-3.0
-5.0
-10
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = -4V
VGS = -10V
-4.0
VGS =-3.5V
VGS = -3V
VGS = -5V
-20
-15
-25
-5
PULSE DURATION = 250
µs,
TC = 25
oC
0
-3.0
-4.5
-6.0
-1.5
0
-10
175oC
VGS, GATE TO SOURCE VOLTAGE (V)
-55oC
25oC
-20
-25
-15
-5
VDD = -15V
PULSE TEST
PULSE DURATION = 250
µs
DUTY CYCLE = 0.5% MAX
0
100
200
300
400
-2.0
-4.0
-6.0
-8.0
-10.0
VGS, GATE TO SOURCE VOLTAGE (V)
ID = -20A
ID = -10A
ID = -5A
ID = -2.5A
TC = 25
oC
2.0
0.5
0.0
-40
0
40
TJ, JUNCTION TEMPERATURE (
oC)
120
1.0
80
1.5
160
200
-80
VGS = -5V, ID = -10.0A
1.2
1.0
0.9
0.8
-40
0
40
TJ, JUNCTION TEMPERATURE (
oC)
120
1.1
80
-80
160
200
ID =- 250uA
RFD10P03L, RFD10P03LSM, RFP10P03L



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