SEMICONDUCTOR

TECHNICAL DATA

GS3A ~ GS3M

2012. 09. 20

1/2

Revision No : 0

General Purpose Rectifier

■ Features

■ Outline Dimensions and Mark

●I

o

3.0 A

● V

RRM

50V-1000V

● High surge current capability

● Cases: Molded plastic

■ Applications

● Rectifier

■ Limiting Values (Absolute MaximumRating)

■ Electrical Characteristics (Ta=25℃ Unless otherwise specified）

GS2

Item

Symbol

Unit

Test Condition

A

B

D

G

J

K

M

Peak Forward Voltage

V

F

V

I

1.15

I

RRM1

Ta =25℃

5.0

Peak Reverse Current

I

RRM2

μA

Ta =125℃

125

Between junction and ambient

47

1)

Thermal

Resistance(Typical)

/W

℃

Between junction and terminal

13

1)

Notes:

pad areas

GS3

Item

Symbol

Unit

Test Conditions

A

B

D

G

J

K

M

Repetitive Peak Reverse Voltage

V

50

100

200

400

600

800

1000

Average Forward Current

A

60HZ Half-sine wave, Resistance

3.0

Surge(Non-repetitive)Forward

Current

A

60Hz Half-sine wave ,1 cycle ,

Ta =25℃

50

Junction

Temperature

℃

-55~+150

Storage Temperature

℃

-55 ~ +150

Dimensions in inches and (millimeters)

DO-214AB(SMC)

.280(7.11)

.260(6.60)

.245(6.22)

.220(5.59)

.129(3.27)

.112(2.85)

.103(2.61)

.078(1.99)

.060(1.52)

.030(0.76)

.008(0.20)

.004(0.10)

.012(0.31)

.006(0.15)

0.119(3.03)

0.390

(9.90)

Mounting Pad Layout

0.151

(3.84)

0.150

(3.82)

.320(8.13)

.305(7.75)