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12P10G-S08-R Datasheet(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

No. de pieza 12P10G-S08-R
Descripción Electrónicos  P-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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Fabricante Electrónico  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Página de inicio  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

12P10G-S08-R Datasheet(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Drain-Source Diode Characteristics
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
-1.8
A
ISM
Pulsed Source Current
---
---
-3.6
A
VSD
Drain Diode Forward Voltage
VGS=0V,IS=-1A, TJ=25℃
---
---
-1
V
trr
Reverse Recovery Time
VR=-100V,IS=-1A,
di/dt=100A/μS, TJ=25℃
---
13
---
ns
Qrr
Reverse Recovery Charge
---
15
---
nC
Notes:
Typical Characteristics： (TC=25℃ unless otherwise noted)
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%.
3.
Essentially independent of operating temperature.
12P10G-S08-R



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