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BC856 Datasheet(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

No. de pieza BC856
Descripción Electrónicos  PNP general purpose Transistor
PDF  4 Pages
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Fabricante Electrónico  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Página de inicio  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

BC856 Datasheet(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

  BC856 Datasheet HTML 1Page - Shanghai Leiditech Electronic Technology Co., Ltd BC856 Datasheet HTML 2Page - Shanghai Leiditech Electronic Technology Co., Ltd BC856 Datasheet HTML 3Page - Shanghai Leiditech Electronic Technology Co., Ltd BC856 Datasheet HTML 4Page - Shanghai Leiditech Electronic Technology Co., Ltd  
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Parameter
Symbol Test conditions
MIN TYP MAX
UNIT
Collector-base breakdown voltage
BC856
BC857
BC858
V(BR)CBO IC=-10μA,IE=0
-80
-50
-30
V
Collector-emitter breakdown voltage BC856
BC857
BC858
V(BR)CEO IC=-10mA,IB=0
-65
-45
-30
V
Emitter-base breakdown voltage
V(BR)EBO IE=-1μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-30V,IE=0
-1
-15
nA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.1
μA
DC current gain
BC856A,857A,858A
BC856B,857B,858B
BC857C,858C
hFE
VCE=-5V,IC=-2mA
125
220
420
250
475
800
Collector-emitter saturation voltage
VCE(sat)
IC=-100mA, IB=-5mA
IC=-10mA, IB=-0.5mA
-0.65
-0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=-100mA, IB=-5mA
-1.1
V
collector capacitance
Cc
VCB=-10V,IE=Ie=0
f=1MHz
4.5
pF
Transition frequency
fT
VCE=-5V, IC= -10mA
f=100MHz
100
MHz
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
BC856/857/858
Rev :
www.leiditech.com
01.06.2017
2/4



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