LM2006K datasheet(2/4 Pages) LEIDITECH

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Electrical Characteristics (TC=25℃ unless otherwise specified)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Off Characteristic

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V,ID= -250μA

-20

IDSS

Zero Gate Voltage Drain Current

VDS = -16V, VGS = 0V,

-1

μA

IGSS

Gate to Body Leakage Current

VDS =0V, VGS = ±8V

±10

μA

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID= -250μA

-0.3

-0.65

-1.0

RDS(on)

Static Drain-Source on-Resistance

note2

VGS =-4.5V, ID =-0.5A

1.2

Ω

VGS =-2.5V, ID =-0.2A

1.5

Dynamic Characteristics

Ciss

Input Capacitance

VDS = -16V, VGS = 0V,

f = 1.0MHz

113

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Switching Characteristics

td(on)

Turn-on Delay Time

VDS = -10V, ID = -0.2A,

RGEN=10Ω,VGS=-4.5V,

Turn-on Rise Time

5.7

td(off)

Turn-off Delay Time

32.6

Turn-off Fall Time

20.3

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain to Source Diode Forward

Current

-0.66

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-1.2

VSD

Drain to Source Diode Forward

Voltage

VGS = 0V, IS = -0.5A

-1.2

Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

LM2006K

Rev :

www.leiditech.com

01.06.2018

2/4

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