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FDS400G Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FDS400G Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 4 page ![]() SOD-723 Plastic-Encapsulate Diodes SOD-723 The marking bar indicates the cathode Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage VRM V DC Blocking Voltage VR 80 V Forward Continuous Current IFM 225 mA Average Rectified Output Current IO 100 mA IFSM 2.0 A Power Dissipation Pd mW Thermal Resistance Junction to Ambient RθJA ℃/W ℃ ℃ Forward Surge Current @t=8.3ms Non-Repetitive Peak Junction Temperature Storage Temperature Tj 150 TSTG -55~+150 100 1250 High Speed Switching Diode FEATURES Small surface mounting type High speed 90 FDS400G High reliability with high surge current handing capability MARKING:7 Electrical Ratings @Ta=25 ℃ Parameter Symbol Min Typ Max Unit Conditions Forward voltage VF 1.2 V IF=100mA Reverse current IR 0.1 µA VR=80V Capacitance between terminals CT 3.0 pF VR=0.5V, f=1MHZ Reverse recovery time trr 4 ns VR=6V,IF=10mA,RL=100Ω 7 SEMICONDUCTOR TECHNICAL DATA FDS400G 2018. 10. 18 1/4 Revision No : 0 |
Número de pieza similar - FDS400G |
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Descripción similar - FDS400G |
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