LP3415ELT3G datasheet(2/3 Pages) LEIDITECH

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ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

DSS

VGS = 0V, ID

-20

= -250uA

Drain-Source On-State Resistance

RDS(on) VGS

= -1.8V, I = -2A

85.0

Drain-Source On-State Resistance

RDS(on) VGS

= -2.5V, I = -4A

75.0

Drain-Source On-State Resistance

RDS(on) VGS

= -4.5V, I = -4A

60.0

Gate Threshold Voltage

VGS(th)

VDS =VGS D

-0.3

, I = -250uA

-1

Zero Gate Voltage Drain Current

IDSS

VDS

-1

= -16V, VGS = 0V

Gate Body Leakage

IGSS

VGS

±10

= ± 8V, VDS = 0V

Gate Resistance

VDS

6.5

= 0V, f = 1.0MHz

Dynamic

Total Gate Charge

VDS =-10V, ID = -4A

VGS = -4.5V

4.59

5.97

Gate-Source Charge

Qgs

2.14

2.78

Gate-Drain Charge

Qgd

2.51

3.26

Turn-On Delay Time

td(on)

VDD = -10V, RL = 2.5Ω

ID = -1A, VGEN = -4.5V

RG = 3Ω

965.2

1930.4

Turn-On Rise Time

1604

3208

Turn-Off Delay Time

td(off)

7716

15432

Turn-Off Fall Time

3452

6904

Input Capacitance

Ciss

VDS = -10V, VGS = 0V

f = 1.0 MHz

36.45

Output Capacitance

Coss

128.57

Reverse Transfer Capacitance

Crss

15.17

Source-Drain Diode

Max. Diode Forward Current

-2.2

Diode Forward Voltage

VSD

IS = -1A, V

-1

GS = 0V

Note: Pulse test: pulse width <= 300us, duty cycle<= 2%

3. Guaranteed by design; not subject to production testing

S-LP3415ELT1G

LP3415ELT1G

Rev :

www.leiditech.com

01.06.2018

2/3

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