UTT12P10G-TN3-R datasheet(3/9 Pages) VBSEMI

No. de pieza	UTT12P10G-TN3-R

Descripción Electrónicos	P-Channel 100 V (D-S) MOSFET

PDF	9 Pages

Scroll/Zoom	100%

Fabricante Electrónico	VBSEMI [VBsemi Electronics Co.,Ltd]

Página de inicio	www.VBsemi.com

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

Transfer Characteristics

Transconductance

012

VGS =10Vthru5V

VGS =4 V

VDS - Drain-to-Source Voltage (V)

VGS =3 V

0.0

0.4

0.8

1.2

1.6

2.0

012

TC = 25 °C

TC =125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

ID - Drain Current (A)

TC = 125 °C

TC = - 55 °C

TC = 25 °C

On-Resistance vs. Drain Current

On-Resistance vs. Gate-to-Source Voltage

Gate Charge

0.10

0.20

0.30

0.40

0.50

VGS =4.5 V

VGS =10V

ID - Drain Current (A)

0.00

0.20

0.40

0.60

0.80

TJ = 25 °C

TJ = 150 °C

VGS - Gate-to-Source Voltage (V)

VDS =80V

ID =3.6 A

VDS =50V

VDS =25V

Qg - Total Gate Charge (nC)

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UTT12P10G-TN3-R

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