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UT4435L-S08-R Datasheet(PDF) 5 Page - VBsemi Electronics Co.,Ltd

No. de pieza UT4435L-S08-R
Descripción Electrónicos  P-Channel 30-V (D-S) MOSFET
PDF  9 Pages
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Fabricante Electrónico  VBSEMI [VBsemi Electronics Co.,Ltd]
Página de inicio  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

UT4435L-S08-R Datasheet(HTML) 5 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
10
0
25
50
75
100
125
150
T C - Case Temperature (°C)
Power, Junction-to-Foot
0
1
2
3
4
5
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating, Junction-to-Ambient
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
25
50
75
100
125
150
TA -Ambient Temperature (°C)
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
UT4435L-S08-R
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