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2SC4533 Datasheet(PDF) 1 Page - Panasonic Semiconductor

No. de pieza 2SC4533
Descripción Electrónicos  Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
PDF  3 Pages
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Fabricante Electrónico  PANASONIC [Panasonic Semiconductor]
Página de inicio  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SC4533 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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1
Power Transistors
2SC4533
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q
High-speed switching
q
High collector to base voltage VCBO
q
Wide area of safe operation (ASO)
q
Satisfactory linearity of foward current transfer ratio hFE
q
Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (T
C=25˚C)
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±0.2
5.5
±0.2
0.5
+0.2
–0.1
1.4
±0.1
1.3
±0.2
0.8
±0.1
2.54
±0.25
5.08
±0.5
2
13
2.7
±0.2
4.2
±0.2
φ3.1±0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
500
500
400
7
6
3
1.2
30
2
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = 500V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 2V, IC = 1.2A
IC = 1.5A, IB = 0.3A
IC = 1.5A, IB = 0.3A
VCE = 10V, IC = 0.2A, f = 1MHz
IC = 1.5A, IB1 = 0.15A, IB2 = – 0.3A,
VCC = 200V
min
400
10
8
typ
10
max
100
100
40
1.0
1.5
1.0
3.0
0.3
Unit
µA
µA
V
V
V
MHz
µs
µs
µs


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