UD4606G-S08-R datasheet(5/14 Pages) VBSEMI

No. de pieza	UD4606G-S08-R

Descripción Electrónicos	N- and P-Channel 30 V (D-S) MOSFET

PDF	14 Pages

Scroll/Zoom	100%

Fabricante Electrónico	VBSEMI [VBsemi Electronics Co.,Ltd]

Página de inicio	www.VBsemi.com

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N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.1

100

0.0

0.3

0.6

0.9

1.2

SD - Source-to-Drain Voltage (V)

J = 150 °C

J = 25 °C

0.7

1.3

1.6

1.9

- 50

- 25

100

125

150

J - Temperature (°C)

D = 250 μA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.01

0.02

0.03

0.04

0.05

GS - Gate-to-Source Voltage (V)

J = 125 °C

J = 25 °C

D = 6.8 A

00.01

Time (s)

0.1

Safe Operating Area, Junction-to-Ambient

0.01

0.1

100

0.1

100

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

100 ms

Limited by R

DS(on)*

1 ms

A = 25 °C

Single Pulse

BVDSS Limited

10 ms

100 μs

1 s

10 s

UD4606G-S08-R

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