STV7618

2/15

Revision follow-up

Target specification

05/2000

version 1.1

document creation

05/2000

version 1.2

few changes in figures

07/2000

version 1.3

addition of pads dimensions/coordinates,

few changes in figures and electrical characteristics

02/2001

version 1.4

TBD mentions replaced with values for Vouthl and Voutlh

Datasheet

06/2001

version 4.0

general update

10/2001

version 4.1

addition of die photo in cover page

new pads dimensions

04/2002

version 4.2

Cover page

features related to output diode current deleted

New values for Source/sink output MOS: -40/30mA

Absolute maximum ratings

Addition of note 4: Transient current. Spike current duration inferior to 300ns.

Tested wafer disclaimer

chapter added

2