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HM85P03K Datasheet(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

No. de pieza HM85P03K
Descripción Electrónicos  P-Channel Enhancement Mode MOSFET
PDF  4 Pages
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Fabricante Electrónico  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
Página de inicio  http://www.hmsemi.com/
Logo HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

HM85P03K Datasheet(HTML) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

  HM85P03K Datasheet HTML 1Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM85P03K Datasheet HTML 2Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM85P03K Datasheet HTML 3Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM85P03K Datasheet HTML 4Page - Shenzhen Huazhimei Semiconductor Co., Ltd  
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HM85P03K
-30VDS／±25VGS／85A(ID) P-Channel Enhancement Mode MOSFET
Electrical Characteristics of CP Test (TA=25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Typ
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage VGS=0V,ID=-250uA
-30
V
IDSS
Zero Gate Voltage Drain Current
VDS=-24V,VGS=0V
1
uA
TJ=85°C
10
VGS(th)
Gate Threshold Voltage
VDS=VGS,ID=-250uA
0.45
0.65
1.5
V
IGSS
Gate Leakage Current
VGS=±25V, VDS=0V
±100
nA
RDS(on)
Drain-Source On-Resistance
VGS=-20V, ID=20A
6
mΩ
VGS=-10V, ID=15A
7.6
VGS=-4.5V, ID=10A
12
VSD
Diode Forward Voltage
ISD=15A,VGS=0V
0.75
1.1
V
RG
Gate Resistance
VGS=0V, VDS=0V,
Frequency=1MHz
3
Ω
Note: 1: Pulse test ; pulse width ≦ 300ns, duty cycle ≦ 2%.
2: Guaranteed by design, not subject to production testing.
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com



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