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P4200SC2 Datasheet(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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P4200SC2 Datasheet(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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2 / 4 page ![]() Rev : 01.06.2014 2/4 www.leiditech.com Electrcal Characteristics (Tamb=25℃) General Notes: ◆ All measurements are made at an ambient temperature of 25℃.Ipp applies to -40℃ through +85℃ temperature range. ◆ Special voltage(VBO and VDRM) and holding current(IH) requirements are available up on request. ◆ Off-state capacitance (CO) is measured at 1 MHz with a 2 V bias and is typical value. ◆ Rating Surge Voltage:100A(10/1000µs) Electrical Parameters(Tamb=25℃) Symbol Parameter Symbol Parameter VDRM Stand-off voltage,is measured at IDRM IH Holding current IDRM Leakage current,is measured at VDRM IT ON-state current VBO Breakover voltage,is measured at 100V/μs VT On-state voltage IBO Breadover current CO Off-state capacitance ismeasured in VDC=2V@1MHZ Part Number VDRM IDRM VBO IBO VT IT `IH CO IPP Min. Max. Max. Max. Max. Max. MAX. Max. Min. V uA V mA V A mA pF A 420 5 520 800 4 2.2 55 8 100 P4200SC2 3 P4200SC2 |
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