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STP80NF06 Datasheet(PDF) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

No. de pieza STP80NF06
Descripción Electrónicos  N-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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Fabricante Electrónico  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Página de inicio  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

STP80NF06 Datasheet(HTML) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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4 —
Figure 5, Drain-source breakdown voltage
Figure 6, Drain-source on-state resistance
-50
0
50
100
150
68
70
72
74
76
T
j, Junction temperature (℃)
I
D = 250 μA
V
GS = 0 V
-50
0
50
100
150
5.0m
6.0m
7.0m
8.0m
9.0m
10.0m
11.0m
12.0m
13.0m
14.0m
I
D =20 A
V
GS = 10 V
T
j, Junction Temperature (℃)
Figure 7, Threshold voltage
Figure 8, Forward characteristic of body diode
Figure 9, Drain-source on-state resistance
Figure 10, Drain current
-50
0
50
100
150
1.00
1.25
1.50
1.75
2.00
2.25
2.50
I
D = 250 μA
T
j, Junction Temperature (℃)
0.5
1.0
1.5
2.0
0.1
1
10
100
T
j = 25 ℃
V
SD, Source-Drain voltage (V)
50
100
150
200
250
5.0m
10.0m
15.0m
20.0m
25.0m
30.0m
35.0m
40.0m
45.0m
50.0m
6.5 V
5.5 V
10 V
7 V
6 V
5 V
V
GS=4.5 V
I
D, Drain current(A)
0
20
40
60
80
100
120
140
0
10
20
30
40
50
60
70
T
C, Case Temperature (℃)
STP80NF06



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