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SWK4532 Datasheet(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

No. de pieza SWK4532
Descripción Electrónicos  N-Channel and P-Channel MOSFET useadvanced trench Technology
PDF  8 Pages
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Fabricante Electrónico  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Página de inicio  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SWK4532 Datasheet(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Description：
This N-Channel and P-Channel MOSFET use advanced trench
Technology To provide excellent RDS(ON)，low gate charge.
This device may be usedto form a level shifted high side switch,
and for a host of other application.
Features：
1) N-Channel:V DS=30V,ID= 6A,RDS(ON)<32mΩ@VGS=10V
P-Channel: V DS=-30V,ID=-6A,RDS(ON)<65mΩ@VGS=-10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
Absolute Maximum Ratings：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
N-Channel
P-Channel
Units
VDS
Drain-Source Voltage
30
-30
V
VGS
Gate-Source Voltage
±12
±12
V
ID
Continuous Drain Current- Tj=150℃
6
-6
A
Continuous Drain Current-TC=70℃
5.8
-5
±30
A
PD
Power Dissipation Ta=25℃
2
W
Pulsed Drain Current Ta=25℃
1.44
℃/ W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
℃
Thermal Characteristics：
Symbol
Parameter
N-Channel
P-Channel
Units
G2
D1
D1
D2
D2
S1
G1
S2
℃/W
RƟJA
Thermal Resistance,Junction to Ambient
110
IDM
Pulsed Drain Current
A
B
A
A
SWK4532


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