UP9T15GL-TN3-R datasheet(3/5 Pages) DOINGTER

No. de pieza	UP9T15GL-TN3-R

Descripción Electrónicos	N-Channel MOSFET uses advanced trench technology

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrónico	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

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Max. Diode Forward Current(Note 2)

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VSD

Diode Forward Voltage(Note 3)

VGS=0V,

Is=20A

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1.2

trr

Reverse Recovery Time

IF=20A,

TJ=25℃

diF/dt=100A/μs(Note 3)

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Qrr

Reverse Recovery Charge

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9.5

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Notes:

Typical Characteristics： (TA=25℃ unless otherwise noted)

Repetitive Rating: Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t ≤ 10 sec.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

Guaranteed by design, not subject to production

EAS condition：Tj=25℃,VDD=10V,VG=10V,L=0.5mH,Rg=25Ω

Vds Drain-Source Voltage (V)

Figure 1 Output Characteristics

Vgs Gate-Source Voltage (V)

Figure 2 Transfer Characteristics

ID- Drain Current (A)

Figure 3 Rdson- Drain Current

TJ-Junction Temperature(℃)

Figure 4 Rdson-Junction Temperature

UP9T15GL-TN3-R

UP9T15GL-TN3-R Datasheet(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.