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UP2790G-S08-R Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

No. de pieza UP2790G-S08-R
Descripción Electrónicos  P-Chanel and N-Channel MOSFET use advanced trench technology
PDF  8 Pages
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Fabricante Electrónico  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Página de inicio  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UP2790G-S08-R Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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N-CH Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
30
33
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=40V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
3
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1
1.6
3
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=6A
---
20
30
mΩ
GFS
Forward Transconductance
VDS=5V, ID=6A
15
---
---
S
Dynamic Characteristics
4
Ciss
Input Capacitance
VDS=15V, VGS=0V, f=1MHz
---
255
---
pF
Coss
Output Capacitance
---
45
---
Crss
Reverse Transfer Capacitance
---
35
---
Switching Characteristics
4
td(on)
Turn-On Delay Time
VDD=15V, RL=2.5Ω
VGS=10V,RGEN=3Ω
---
4.5
---
ns
tr
Rise Time
---
2.5
---
ns
td(off)
Turn-Off Delay Time
---
14.5
---
ns
tf
Fall Time
---
3.5
---
ns
Qg
Total Gate Charge
VDS=15V,ID=6A,
VGS=10V
---
13
---
nC
Qgs
Gate-Source
Charge
---
5.5
---
nC
Qgd
Gate-Drain “Miller” Charge
---
3.5
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
3
VGS=0V,IS=6A
---
0.8
1.2
V
UP2790G-S08-R



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