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UT75N03L-TN3-R Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

No. de pieza UT75N03L-TN3-R
Descripción Electrónicos  N-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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Fabricante Electrónico  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Página de inicio  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UT75N03L-TN3-R Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
30
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=24V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1
3
V
RDS(ON)
Drain-Source On Resistance
2
VGS=10V,ID=40A
---
3.6
4.2
mΩ
VGS=4.5V,ID=30A
---
---
7
GFS
Forward Transconductance
VDS=10V, ID=15A
---
28
---
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=15V, VGS=0V, f=1MHz
---
1950
2350
pF
Coss
Output Capacitance
---
320
---
Crss
Reverse Transfer Capacitance
---
240
---
Switching Characteristics
td(on)
Turn-On Delay Time
VDD=15V, ID=15A,
VGS=10V,RGEN=3.3Ω
---
13
---
ns
tr
Rise Time
---
36
---
ns
td(off)
Turn-Off Delay Time
---
43
---
ns
tf
Fall Time
---
16
---
ns
Qg
Total Gate Charge
VGS=10V, VDS=24V,
ID=20A
---
42
84
nC
Qgs
Gate-Source
Charge
---
3.9
---
nC
Qgd
Gate-Drain “Miller” Charge
---
14
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
2
VGS=0V,IS=30A
---
---
1.2
V
UT75N03L-TN3-R



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