UT4435G-S08-R datasheet(3/4 Pages) DOINGTER

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UT4435G-S08-R Datasheet(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

No. de pieza	UT4435G-S08-R

Descripción Electrónicos	P-Channel MOSFET uses advanced trench technology

PDF	4 Pages

Scroll/Zoom	100%

Fabricante Electrónico	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

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Notes:

1. Repetitive Rating : Pulsed width limited by maximum junction temperature.

2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

3. Essentially independent of operating temperature.

Typical Characteristics： (T

C=25℃ unless otherwise noted)

Fig.1 Continuous Drain Current vs. TC

Fig.2 Normalized RDSON vs. TJ

Fig.3 Normalized Vth vs. TJ

Fig.4 Gate Charge Waveform

UT4435G-S08-R

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