UTT20N10L-TN3-R datasheet(1/4 Pages) DOINGTER

No. de pieza	UTT20N10L-TN3-R

Descripción Electrónicos	N-Channel MOSFET uses advanced trench technology

PDF	4 Pages

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Fabricante Electrónico	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

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Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=100V,ID=11.3A,RDS(ON)<152mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

100

V

VGS

Gate-Source Voltage

±20

V

ID

Continuous Drain Current-TC=25℃

G

11.3

A

Continuous Drain Current-TC=70℃

9

IDM

Pulsed Drain Current

45.4

A

PD

Power Dissipation,

TC=25℃

29.9

W

Power Dissipation,

TC=70℃

19.1

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJC

Thermal Resistance,Junction to Case

4.17

℃/W

D

S

G

UTT20N10L-TN3-R

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UTT20N10L-TN3-R Datasheet(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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