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MMG150B065PD6EN Datasheet(PDF) 2 Page - MacMic

No. de pieza MMG150B065PD6EN
Descripción Electrónicos  650V 150A IGBT Module
PDF  5 Pages
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Fabricante Electrónico  MACMIC [MacMic]
Página de inicio  https://macmicst.com.tw
Logo MACMIC - MacMic

MMG150B065PD6EN Datasheet(HTML) 2 Page - MacMic

  MMG150B065PD6EN Datasheet HTML 1Page - MacMic MMG150B065PD6EN Datasheet HTML 2Page - MacMic MMG150B065PD6EN Datasheet HTML 3Page - MacMic MMG150B065PD6EN Datasheet HTML 4Page - MacMic MMG150B065PD6EN Datasheet HTML 5Page - MacMic  
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Unit
mA
mA
nA
Ω
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
K /W
Unit
ns
A
µC
mJ
K /W
trr
Reverse Recovery Time
QRR
IF=150A , VR=300V
dIF/dt=-1600A/μs
TJ =150℃
Erec
VCC=300V,IC=150A
RG =2.2Ω,
VGE=±15V,
Inductive Load
TJ=150℃
TJ=25℃
TJ=150℃
TJ=25℃
Turn on Delay Time
Rise Time
11
TJ=25℃
1.55
1.2
3.5
0.35
Turn off Delay Time
VCC=300V,IC=150A
RG =2.2Ω,
VGE=±15V,
Inductive Load
VCC=300V,IC=150A
RG =2.2Ω,
VGE=±15V,
Inductive Load
0.75
TJ=150℃
Turn off Energy
80
TJ=25℃
Junction to Case Thermal Resistance （ Per Diode）
Reverse Recovery Charge
5
9.3
290
400
Eon
Turn on Energy
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
RthJC
ISC
Eoff
tpsc≤6µS , VGE=15V
TJ=125℃,VCC=360V
Short Circuit Current
TJ=150℃
4
750
A
Max.
5.15
1.95
Junction to Case Thermal Resistance （ Per IGBT）
Forward Voltage
IF=150A , VGE=0V, TJ=25℃
1.45
Min.
Diode-inverter
Symbol
VF
IF=150A , VGE=0V, TJ=150℃
V
IGBT-inverter
VCE(sat)
ICES
td(on)
Parameter/Test Conditions
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
MMG150B065PD6EN
tr
td(off)
V
VCE=25V, VGE=0V, f =1MHz
Gate Leakage Current
VCE=650V, VGE=0V, TJ=25℃
VCE=0V,VGE=±15V, TJ=150℃
IC=150A, VGE=15V, TJ=150℃
Typ.
Gate Emitter Threshold Voltage
2
VCE=300V, IC=150A , VGE=±15V
5.8
0.95
IC=150A, VGE=15V, TJ=25℃
Cres
IGES
Cies
Rgint
Gate Charge
-400
VCE=650V, VGE=0V, TJ=150℃
6.5
1.45
1.9
Input Capacitance
RthJCD
Reverse Recovery Energy
0.6
210
70
330
Typ.
70
TJ=25℃
TJ=150℃
210
300
TJ=150℃
200
VCE=VGE, IC=2.4mA
Collector Emitter
Saturation Voltage
Min.
VGE(th)
Qg
Integrated Gate Resistor
Reverse Transfer Capacitance
50
Parameter/Test Conditions
Fall Time
TJ=25℃
1
4.9
Collector Leakage Current
Max.
1.7
Symbol
IRRM
Max. Reverse Recovery Current
95
tf
2



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