MJD44H11IP datasheet(1/2 Pages) RECTRON

No. de pieza	MJD44H11IP

Descripción Electrónicos	Designed for general purpose power and switching

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Fabricante Electrónico	RECTRON [Rectron Semiconductor]

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Marking code

MJD44H11

Silicon NPN POWER triode

1

base

2

collector 3

emitter

Ouline example

encapsulation mode

TO-251/TO-252

Designed for general purpose power and switching

Maximum ratings(Ta=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Emitter Breakdown Voltage

VCEO

80

V

Emitter-Base Breakdown Voltage

VEBO

5V

Collector Current

IC

8A

Collector Power Dissipation

PC

20

W

Junction Temperatuye

TJ

Storage Temperatuye

Tstg

Electrical Characteristics (Ta=25

unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Max

Unit

Collector Emitter Sustaining Voltage VCEO(sus)

IC=30A IB=0

80

V

Emitter-Base Breakdown Voltage

VEBO

IE=100uA IC=0

5

V

Collector Cutoff Current

ICES

VCE=80V VBE=0

1

mA

Emitter Cutoff Current

IEBO

VCE=5V IB=0

5

mA

Collector-Emitter Saturation Voltage

VCE(sat) IC=5A IB=0.5A

1.5

V

Collector-Base Saturation Voltage

VBE(sat) IC=5A IB=0.5A

2

V

DC Current Gain

HFE

VCE=5V IC=1A

65

350

transition frequency

fT

VCE=5V IC=1A f=3MHz

10

MHz

MJD44H11

2019-02/17

REV:

P/N suffix V means Halogen-free

C

P/N suffix V means AEC-Q101 qualified, e.g:MJD44H11V

Device

Device Package

MJD44H11

TO252

MJD44H11IP

TO251

Número de pieza similar - MJD44H11IP

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Motorola, Inc	MJD44H11	192Kb / 6P	SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS
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