Symbol

Parameter

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

μA20

-

-

V

Zero Gate Voltage Drain Current

-

-

1

μA

Gate-Body Leakage Current

-

-

±100

nA

Gate Threshold Voltage

μA

0.5

0.75

1.1

V

-

3.5

5.5

m

Ω

-

6

7.5

m

Ω

Forward Transconductance

20

-

-

S

Input Capacitance

-

2016

-

PF

Output Capacitance

-

391

-

PF

Reverse Transfer Capacitance

-

130

-

PF

Turn-on Delay Time

-

6

-

nS

Turn-on Rise Time

-

4

-

nS

Turn-Off Delay Time

-

31

-

nS

Turn-Off Fall Time

-

5

-

nS

Total Gate Charge

-

15

-

nC

Gate-Source Charge

-

3

-

nC

Gate-Drain Charge

-

4

-

nC

Drain-Source Diode Characteristics

-

-

1.2

V

-

-

60

A

Reverse Recovery Time

-18

-

nS

Qrr

Reverse Recovery Charge

-30

-

nC

Notes:

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

Surface Mounted on FR4 Board, t

≤ 10 sec.

3.

Pulse Test: Pulse Width

≤ 300μs, Duty Cycle ≤ 2%.

4.

Guaranteed by design, not subject to production

5.

Ω

TJ = 25°C, IF = 20A

di/dt = 100A/

F=1.0MHz

Drain-Source On-State Resistance

N-Ch MOSFET

Page 2

www.winsok.tw

Rev1.0 Jan.2021

WSF2065