ECH8655R-R-TL-H datasheet(3/7 Pages) ONSEMI

No. de pieza	ECH8655R-R-TL-H

Descripción Electrónicos	N-Channel Power MOSFET

PDF	7 Pages

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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ECH8655R−R−TL−H

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ELECTRICAL CHARACTERISTICS at TA = 25°C

Parameter

Unit

Ratings

Conditions

Symbol

Parameter

Unit

Max

Typ

Min

Conditions

Symbol

Total Gate Charge

VDS = 10 V,

VGS = 10 V,

ID = 9 A

16.8

Gate−to−Source Charge

Qgs

1.6

Gate−to−Drain “Miller” Charge

Qgd

4.8

Diode Forward Voltage

VSD

IS = 9 A,

VGS = 0 V

0.8

1.2

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Switching Time Test Circuit

Figure 2. Switching Time Test Circuit

4.5 V

0 V

VIN

VDD = 10 V

ID = 4.5 A

RL= 2.22 W

PW = 10 ms

D.C.≤ 1%

P.G

50 W

VOUT

ECH8655R

Rg= 1 kW

ORDERING INFORMATION

Device

Package

Shipping

Memo

ECH8655R−R−TL−H

ECH8

3,000 pcs./reel

Pb Free and Halogen Free

ECH8655R-R-TL-H Datasheet(PDF) 3 Page - ON Semiconductor

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