HCS08 datasheet(51/316 Pages) NXP

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Chapter 4 Memory

MC9S08SG8 MCU Series Data Sheet, Rev. 8

Freescale Semiconductor

Figure 4-2. FLASH Program and Erase Flowchart

4.5.4

Burst Program Execution

The burst program command is used to program sequential bytes of data in less time than would be

required using the standard program command. This is possible because the high voltage to the FLASH

array does not need to be disabled between program operations. Ordinarily, when a program or erase

command is issued, an internal charge pump associated with the FLASH memory must be enabled to

supply high voltage to the array. Upon completion of the command, the charge pump is turned off. When

a burst program command is issued, the charge pump is enabled and then remains enabled after completion

of the burst program operation if these two conditions are met:

•

The next burst program command has been queued before the current program operation has

completed.

•

The next sequential address selects a byte on the same physical row as the current byte being

programmed. A row of FLASH memory consists of 64 bytes. A byte within a row is selected by

addresses A5 through A0. A new row begins when addresses A5 through A0 are all zero.

START

WRITE TO FLASH

TO BUFFER ADDRESS AND DATA

WRITE COMMAND TO FCMD

YES

FPVIOL OR

WRITE 1 TO FCBEF

TO LAUNCH COMMAND

AND CLEAR FCBEF (Note 2)

FCCF ?

ERROR EXIT

DONE

Note 2: Wait at least four bus cycles

FACCERR ?

CLEAR ERROR

FACCERR ?

WRITE TO FCDIV (Note 1)

Note 1: Required only once after reset.

before checking FCBEF or FCCF.

FLASH PROGRAM AND

ERASE FLOW

HCS08 Datasheet(PDF) 51 Page - NXP Semiconductors