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FDMA6676PZ Datasheet(PDF) 3 Page - ON Semiconductor

No. de pieza FDMA6676PZ
Descripción Electrónicos  MOSFET ??Single, P-Channel, POWERTRENCH
PDF  7 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FDMA6676PZ Datasheet(HTML) 3 Page - ON Semiconductor

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FDMA6676PZ
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued)
Symbol
Unit
Max.
Typ.
Min.
Test Condition
Parameter
SWITCHING CHARACTERISTICS
Qg
Total Gate Charge
VGS = 0 V to −4.5 V,
VDD = −15 V, ID = −11 A
20
28
nC
Qgs
Gate to Source Charge
VDD = −15 V, ID = −11 A
4.5
nC
Qgd
Gate to Drain “Miller” Charge
VDD = −15 V, ID = −11 A
13
nC
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD
Source to Drain Diode Forward
Voltage
VGS = 0 V, IS = −2 A (Note 2)
−0.7
−1.2
V
VGS = 0 V, IS = −11 A (Note 2)
−0.9
−1.4
V
trr
Reverse Recovery Time
IF = -11 A, di/dt = 100 A/ms
31
50
ns
Qrr
Reverse Recovery Charge
9
18
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqCA is determined
by the user’s board design.
a. 52°C/W when mounted
on a 1 in2 pad of 2 oz copper.
b. 145°C/W when mounted
on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Pulse Id refers to Forward Bias Safe Operation Area.
ORDERING INFORMATION
Device Marking
Device
Package
Package Method
676
FDMA6676PZ
WDFN−6
3000 Tape / Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.



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