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FDMA6676PZ Datasheet(PDF) 3 Page - ON Semiconductor |
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FDMA6676PZ Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 7 page ![]() FDMA6676PZ www.onsemi.com 3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) Symbol Unit Max. Typ. Min. Test Condition Parameter SWITCHING CHARACTERISTICS Qg Total Gate Charge VGS = 0 V to −4.5 V, VDD = −15 V, ID = −11 A 20 28 nC Qgs Gate to Source Charge VDD = −15 V, ID = −11 A 4.5 nC Qgd Gate to Drain “Miller” Charge VDD = −15 V, ID = −11 A 13 nC DRAIN−SOURCE DIODE CHARACTERISTICS VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = −2 A (Note 2) −0.7 −1.2 V VGS = 0 V, IS = −11 A (Note 2) −0.9 −1.4 V trr Reverse Recovery Time IF = -11 A, di/dt = 100 A/ms 31 50 ns Qrr Reverse Recovery Charge 9 18 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqCA is determined by the user’s board design. a. 52°C/W when mounted on a 1 in2 pad of 2 oz copper. b. 145°C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. 3. Pulse Id refers to Forward Bias Safe Operation Area. ORDERING INFORMATION Device Marking Device Package Package Method† 676 FDMA6676PZ WDFN−6 3000 Tape / Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. |
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