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STM32G070KB Datasheet(PDF) 58 Page - STMicroelectronics

No. de pieza STM32G070KB
Descripción Electrónicos  Arm® Cortex®-M0 32-bit MCU, 128 KB Flash, 36 KB RAM, 4x USART, timers, ADC, comm. I/Fs, 2.0-3.6V
PDF  93 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32G070KB Datasheet(HTML) 58 Page - STMicroelectronics

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Electrical characteristics
STM32G070CB/KB/RB
58/93
DS12766 Rev 2
5.3.10
Flash memory characteristics
IDD(PLL)
PLL power consumption
on VDD(1)
VCO freq = 96 MHz
-
200
260
μA
VCO freq = 192 MHz
-
300
380
VCO freq = 344 MHz
-
520
650
1. Guaranteed by design.
2. Take care of using the appropriate division factor M to obtain the specified PLL input clock values. The M factor is shared
between the two PLLs.
Table 39. PLL characteristics(1) (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 40. Flash memory characteristics(1)
Symbol
Parameter
Conditions
Typ
Max
Unit
tprog
64-bit programming time
-
85
125
µs
tprog_row
Row (32 double word) programming time
Normal programming
2.7
4.6
ms
Fast programming
1.7
2.8
tprog_page
Page (2 Kbyte) programming time
Normal programming
21.8
36.6
Fast programming
13.7
22.4
tERASE
Page (2 Kbyte) erase time
-
22.0
40.0
tprog_bank
Bank (128 Kbyte(2)) programming time
Normal programming
1.4
2.4
s
Fast programming
0.9
1.4
tME
Mass erase time
-
22.1
40.1
ms
IDD(FlashA) Average consumption from VDD
Programming
3
-
mA
Page erase
3
-
Mass erase
3
-
IDD(FlashP) Maximum current (peak)
Programming, 2 µs peak
duration
7-
mA
Erase, 41 µs peak duration
7
-
1. Guaranteed by design.
2. Values provided also apply to devices with less Flash memory than one 128 Kbyte bank
Table 41. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Min(1)
1. Guaranteed by characterization results.
Unit
NEND
Endurance
TA = -40 to +85 °C
1
kcycles
tRET
Data retention
1 kcycle(2) at TA = 85 °C
2. Cycling performed over the whole temperature range.
15
Years



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