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2SC4458 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC4458 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SC4458 DESCRIPTION · High Breakdown Voltage : V(BR)CBO= 800V(Min) · High Switching Speed · High Reliability · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Switching regulators · Ultrasonic generators · High frequency inverters · General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @ TC=25℃ 45 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.8 ℃ /W |
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