Document Number: 91116

www.vishay.com

S11-1053-Rev. C, 30-May-11

1

This document is subject to change without notice.

Power MOSFET

IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L

Vishay Siliconix

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount (IRFBC40S, SiHFBC40S)

• Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)

• Available in Tape and Reel (IRFBC40S, SiHFBC40S)

• Dynamic dV/dt Rating

• 150 °C Operating Temperature

•Fast Switching

• Fully Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

the accommodating die sizes up to HEX-4. It provides the

highest

power

capability

and

the

lowest

possible

on-resistance in any existing surface mount package. The

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface mount application. The

through-hole version (IRFBC40L, SiHFBC40L) is available

for low-profile applications.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. Uses IRFBC40, SiHFBC40 data and test conditions.

PRODUCT SUMMARY

600

1.2

60

8.3

30

Configuration

Single

N-Channel MOSFET

G

D

S

G

D

S

G

D

S

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

SiHFBC40S-GE3

SiHFBC40L-GE3

Lead (Pb)-free

IRFBC40SPbF

IRFBC40LPbF

SiHFBC40S-E3

SiHFBC40L-E3

PARAMETER

SYMBOL

LIMIT

UNIT

600

V

± 20

Continuous Drain Current

6.2

A

3.9

25

Linear Derating Factor

1.0

W/°C

570

mJ

6.2

A

13

mJ

Maximum Power Dissipation

130

W

3.1

dV/dt

3.0

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

* Pb containing terminations are not RoHS compliant, exemptions may apply