IRFBC40L datasheet(2/11 Pages) VISHAY

2 / 11 page

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Document Number: 91116

S11-1053-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L

Vishay Siliconix

Note

a. When mounted on 1" square PCB ( FR-4 or G-10 material).

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

 300 μs; duty cycle  2 %.

c. Uses IRFBC40, SiHFBC40 data and test conditions.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

(PCB Mounted, steady-state)a

RthJA

-40

°C/W

Maximum Junction-to-Case

RthJC

-1.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0, ID = 250 μA

600

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = 1 mA

0.70

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 600 V, VGS = 0 V

100

μA

VDS = 480 V, VGS = 0 V, TJ = 125 °C

500

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 3.7 Ab

1.2



Forward Transconductance

gfs

VDS = 100 V, ID = 3.7 Ab

4.7

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5c

1300

Output Capacitance

Coss

160

Reverse Transfer Capacitance

Crss

-30

Total Gate Charge

VGS = 10 V

ID = 6.2 A, VDS = 480 V,

see fig. 6 and 13b, c

Gate-Source Charge

Qgs

8.3

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 300 V, ID = 6.2 A,

Rg = 9.1 , RD = 47 ,

see fig. 10b, c

-13

Rise Time

-18

Turn-Off Delay Time

td(off)

-55

Fall Time

-20

Internal Source Inductance

Between lead, and center of die contact

7.5

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

6.2

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

TJ = 25 °C, IS = 6.2 A, VGS = 0 Vb

1.5

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/μsb

450

940

Body Diode Reverse Recovery Charge

Qrr

-3.8

7.9

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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