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STP45N60DM6 Datasheet(PDF) 2 Page - STMicroelectronics

No. de pieza STP45N60DM6
Descripción Electrónicos  N-channel 600 V, 0.085 Ω typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages
PDF  15 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP45N60DM6 Datasheet(HTML) 2 Page - STMicroelectronics

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Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
±25
V
ID
Drain current (continuous) at TC = 25 °C
30
A
Drain current (continuous) at TC = 100 °C
19
A
IDM (1)
Drain current (pulsed)
95
A
PTOT
Total power dissipation at TC = 25 °C
210
W
dv/dt (2)
Peak diode recovery voltage slope
100
V/ns
di/dt (2)
Peak diode recovery current slope
1000
A/µs
dv/dt (3)
MOSFET dv/dt ruggedness
100
V/ns
Tstg
Storage temperature range
-55 to 150
°C
TJ
Operating junction temperature range
1. Pulse width limited by safe operating area
2. ISD ≤ 30 A, VDS (peak) < V(BR)DSS, VDD= 400 V
3. VDS ≤ 480 V
Table 2. Thermal data
Symbol
Parameter
Value
Unit
TO-220
TO-247
Rthj-case
Thermal resistance junction-case
0.6
°C/W
Rthj-amb
Thermal resistance junction-ambient
62.5
50
°C/W
Table 3. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
6
A
EAS
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V)
630
mJ
STP45N60DM6, STW45N60DM6
Electrical ratings
DS11664 - Rev 3
page 2/15



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