STGF10M65DF2 datasheet(1/17 Pages) STMICROELECTRONICS

No. de pieza	STGF10M65DF2

Descripción Electrónicos	Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-220FP package

PDF	17 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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April 2017

DocID027428 Rev 7

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This is information on a product in full production.

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STGF10M65DF2

Trench gate field-stop IGBT, M series 650 V, 10 A

low-loss in TO-220FP package

Datasheet - production data

Figure 1: Internal schematic diagram

Features



6 µs of short-circuit withstand time



VCE(sat) = 1.55 V (typ.) @ IC = 10 A



Tight parameter distribution



Safer paralleling



Positive VCE(sat) temperature coefficient



Low thermal resistance



Soft and very fast recovery antiparallel diode



Maximum junction temperature: TJ = 175 °C

Applications



Motor control



UPS



PFC



General purpose inverter

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the M series

IGBTs, which represent an optimal balance

between inverter system performance and

efficiency where low-loss and short-circuit

functionality are essential. Furthermore, the

positive VCE(sat) temperature coefficient and tight

parameter distribution result in safer paralleling

operation.

Table 1: Device summary

Order code

Marking

Package

Packing

STGF10M65DF2

G10M65DF2

TO-220FP

Tube

TO-220FP

C (2)

G (1)

E (3)

Sc12850_no_tab

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STGF10M65DF2 Datasheet(PDF) 1 Page - STMicroelectronics

STGF10M65DF2 Datasheet(HTML) 1 Page - STMicroelectronics

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