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ISCN366P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza ISCN366P
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCN366P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc&iscsemi is registered trademark
isc Silicon NPN Power Transistor
ISCN366P
DESCRIPTION
·
DC Current Gain-
: hFE= 20-60@IC = 0.5A
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min)
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current -Continuous
5.0
A
PC
Collector Power Dissipation@ TC=25℃
80
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.56
℃
/W


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