VITESSE

SEMICONDUCTOR CORPORATION

G52157-0, Rev 3.2

Page 3

05/01/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

Internet: www.vitesse.com

Preliminary Data Sheet

VSC7925

SONET/SDH 2.5Gb/s Laser Diode Driver

Table 4: Recommended Operating Conditions

NOTE: (1) Lower limit of specification is ambient temperature and upper limit is case temperature.

Table 5: Power Dissipation

Table 6: Laser Driver DC Electrical Specifications

Table 7: Laser Driver AC Electrical Specifications

Symbol

Parameter

Min

Typ

Max

Units

Conditions

GND

Positive Voltage Rail

0

V

Negative Voltage Rail

-5.5

-5.2

-4.9

V

Operational Temperature9.0 pt

-40

85

°C

Power dissipation = 1.3W

Ceramic Package

Symbol

Parameter

Min

Typ

Max

Units

Conditions

mA

Total Power Dissipation

1200

mW

Symbol

Parameter

Min

Typ

Max

Units

Conditions

Programmable Laser Bias Current

2

50

mA

Programmable Modulation Current

2

-

60

mA

Laser Bias Control Voltage

2.1

Laser Modulation Control Voltage

2.1

Output Voltage Compliance

GND

-2.5V

Symbol

Parameter

Min

Typ

Max

Units

Conditions

Output Rise and Fall Times

100

ps

25

Ω load, 20%-80%,

Data to Clock Setup Time

50

ps

Hold Time

50

ps