SAMWIN
SW830
REV0.1
04.10.1
General Description
This power MOSFET is produced in CHMC with
advanced VDMOS technology of SAMWIN. This
technology enable power MOSFET to have
better characteristics, such as fast switching time,
low on resistance, low gate charge and
especially excellent avalanche characteristics. It
is mainly suitable for half bridge or full bridge
resonant topology like a electronic ballast, and
also low power switching mode power appliances.
Features
N-Channel MOSFET
BV
DSS (Minimum)
R
DS(ON) (Maximum)
I
D
Qg (Typical)
P
D (@TC=25
)
: 500V
: 1.4 ohm
: 5.0A
: 28 nc
: 73W
G
S
D
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
V
DSS
Drain to Source Voltage
500
V
Continuous Drain Current (@Tc=25℃)
5.5
A
Continuous Drain Current (@Tc=100℃)
3.7
A
I
DM
Drain Current Pulsed
(Note 1)
22
A
V
GS
Gate to Source Voltage
±30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
390
mJ
E
AR
Repetitive Avalanche Energy
(Note 1)
7.3
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
3.5
V/ns
Total Power Dissipation (@Tc=25℃)
73
W
Derating Factor above 25℃
0.58
W/℃
T
STG,TJ
Operating junction temperature &Storage temperature
-55~+150
℃
T
L
Maximum Lead Temperature for soldering purpose, 1/8 from Case
for 5 seconds.
300
℃
P
D
I
D
Thermal Characteristics
℃/W
62
-
-
Thermal Resistance, Junction-to-Ambient
RθJA
℃/W
-
0.5
-
Thermal Resistance, Case-to-Sink
RθCS
℃/W
1.71
-
-
Thermal Resistance, Junction-to-Case
RθJC
Max
Typ
Min
Units
Value
Parameter
Symbol
1/6
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