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TMG3C60F Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza TMG3C60F
Descripción Electrónicos  isc Triacs
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

TMG3C60F Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Triacs
TMG3C60F
FEATURES
·
With TO-220F insulated package
·
Suitables for general purpose applications where gate high sensitivity is
required. Application on 4Q such as phase control and static switching.
·
Minimum Lot-to-Lot variations for robust device performance and reliable
Operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM
Repetitive peak off-state voltage
600
V
VRRM
Repetitive peak reverse voltage
600
V
IT(RMS)
RMS on-state current (full sine wave)Tj=90℃
3.0
A
ITSM
Non-repetitive peak on-state current tp=10ms
27
A
Tj
Operating junction temperature
-40~125
℃
Tstg
Storage temperature
-40~150
℃
Rth(j-c)
Thermal resistance, junction to case
5.0
℃
/W
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
IRRM
Repetitive peak reverse current
VR=VRRM,
VR=VRRM, Tj=110℃
0.01
0.75
mA
IDRM
Repetitive peak off-state current
VD=VDRM,
VD=VDRM, Tj=110℃
0.01
0.75
mA
IGT
Gate trigger current
Ⅰ
-Ⅱ-Ⅲ
VD=12V; RL= 33Ω
15
mA
Ⅳ
15
IH
Holding current
IGT= 0.1A, Gate Open
2.5
mA
VGT
Gate trigger voltage all quadrant VD=12V; RL= 30Ω
1.5
V
VTM
On-state voltage
IT= 4.5A
1.4
V


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